l Fast Switching l Low ON Resistance(Rdson≤66mΩ) l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:28.6pF) l 100% Single Pulse avalanche .

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS40N20F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

CS40N20FA9E

CS40N20FA9H

CS40N20A8

CS40N20ANH

CS40N25A8R

CS40N25FA9R

CS40N27

CS40N045A4

CS400

CS4041

CS4050V-01L

CS40D

CS40L100CT-A